Lee, A. and Brown, A. R. and Asenov, A. and Roy, S. (2004) RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate
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منابع مشابه
Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation
As MOSFETs shrink into the decanano regime it is predicted that random telegraph signals (RTS), resulting from trapping events in defect states near the Si/SiO2 interface, will significantly affect analogue and digital circuit performance. At these same scales, intrinsic parameter fluctuations introduced by atomic differences between devices will also be significant. In this work, a methodology...
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